Mitigation of Thermal Stability Concerns in FinFET Devices
نویسندگان
چکیده
Here, we developed a procedure for mitigating thermal hazards in packaged FinFET devices. A monitoring system was installed into devices, based on self-heating impact analysis the and device levels, to allow observation alerting of chip temperature reliability risks. novel algorithm reducing measurement noise by means fluctuation compensation filtering invalid data is presented demonstrated The results this work show that proposed techniques make exceptional improvements sensory accuracy. Using methodology enables mitigation concerns systems, including large servers, accelerates development smart resource allocation formations.
منابع مشابه
suppression of coke formation in thermal cracking by coke inhibitors
the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...
15 صفحه اولstudy of cohesive devices in the textbook of english for the students of apsychology by rastegarpour
this study investigates the cohesive devices used in the textbook of english for the students of psychology. the research questions and hypotheses in the present study are based on what frequency and distribution of grammatical and lexical cohesive devices are. then, to answer the questions all grammatical and lexical cohesive devices in reading comprehension passages from 6 units of 21units th...
A Qualitative Approach on FinFET Devices Characteristics
FinFET devices are comprehensively investigated owing to the projection for application in the CMOS integrated circuits fabrication. Deducing MOSFET size have great influence on electrostatic characteristic.The indiscriminate variations of the characteristics lead to a divergence effect which is imperative from the point of view of design and manufacture. In this paper different types of the po...
متن کاملSensitivity of Double-Gate and FinFET Devices to Process Variations
We investigate the manufacturability of 20-nm double-gate and FinFET devices in integrated circuits by projecting process tolerances. Two important factors affecting the sensitivity of device electrical parameters to physical variations were quantitatively considered. The quantum effect was computed using the density gradient method and the sensitivity of threshold voltage to random dopant fluc...
متن کاملMODELING AND SIMULATION OF FinFET SRAM FOR NANOSCALE DEVICES
Sub-threshold leakage and process-induced variations in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve control Vt and reduce short channel effects. Among the likely candidates, FinFETs are the most attractive option because of their good scalability and possibilities for further SRAM performance and yield enhancement t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11203305